aalto1 untyped-item.component.html
Effect of high-temperature annealing on the residual strain and bending of free-standing GaN films grown by hydride vapor phase epitaxy
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
Series
Applied Physics Letters, Volume 88, issue 14, pp. 1-3
Abstract
The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.
Description
Other note
Citation
Paskova, T, Hommel, D, Paskov, P P, Darakchieva, V, Monemar, B, Bockowski, M, Suski, T, Grzegory, I, Tuomisto, F, Saarinen, K, Ashkenov, N & Schubert, M 2006, 'Effect of high-temperature annealing on the residual strain and bending of free-standing GaN films grown by hydride vapor phase epitaxy', Applied Physics Letters, vol. 88, no. 14, 141909, pp. 1-3. https://doi.org/10.1063/1.2192149