Fabrication of Optoelectronic Devices with Two-dimensional Layered Materials and Their Heterostructures

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School of Electrical Engineering | Doctoral thesis (article-based) | Defence date: 2020-01-17
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Date

2020

Department

Elektroniikan ja nanotekniikan laitos
Department of Electronics and Nanoengineering

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Mcode

Degree programme

Language

en

Pages

72 + app. 58

Series

Aalto University publication series DOCTORAL DISSERTATIONS, 1/2020

Abstract

This thesis focuses on the fabrication of two-dimensional (2D) layered materials-based devices for optoelectronic applications, such as graphene-based modulators, WSe2/MoSe2 heterojunction and WSe2/SnSe2 heterojunction-based photodetectors. The thesis is divided into five parts. The first part gives an overview of the potential applications of 2D layered materials and their heterostructures in the field of optoelectronics. The second part introduces the fundamental properties of 2D layered materials, including graphene, transition metal dichalcogenides, and their van der Waals heterojunctions. The third part discusses the process methods that have been used for fabrication of optoelectronic devices. For example, mechanical exfoliation and chemical vapor deposition methods are used to obtain 2D layered materials, and electron beam lithography, atomic layer deposition and reactive ion etching are the most important methods during the device processing. The fourth part introduces the characterization methods of the fabricated devices. For example, Raman and photoluminescence spectroscopies are used to characterize the 2D layered materials, and Atomic force microscope is used to check the thickness of the exfoliated 2D layered material flakes. The electrical and photocurrent measurements are also presented for characterization of device performance. The fifth part presents the optoelectronic applications of the fabricated devices. First, two different kinds of graphene-based modulators are presented. Then, we demonstrate the WSe2/MoSe2 and WSe2/SnSe2 heterojunctions-based photodetectors with broadband photodetection and high photoresponsivity. Finally, I summarize the whole contents and give the outlook on the applications of the 2D layered materials-based optoelectronics.

Description

Supervising professor

Halonen, Kari, Prof., Aalto University, Department of Electronics and Nanoengineering, Finland

Thesis advisor

Sun, Zhipei, Prof., Aalto University, Department of Electronics and Nanoengineering, Finland

Keywords

two-dimensional layered materials, van der Waals heterojunction, photodetectors, modulators

Other note

Parts

  • [Publication 1]: Hui Xue, Yunyun Dai, Wonjae Kim, Yadong Wang, Xueyin Bai, Mei Qi, Kari Halonen, Harri Lipsanen, Zhipei Sun. High photoresponsivity and broadband photodetection with a bandengineered WSe2/SnSe2 heterostructure, Nanoscale, 2019, vol. 11, pp. 3240-3247.
    Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201903052187
    DOI: 10.1039/c8nr09248f View at publisher
  • [Publication 2]: Hui Xue, Yadong Wang, Yunyun Dai, Wonjae Kim, Henri Jussila, Mei Qi, Jannatul Susoma, Zhaoyu Ren, Qing Dai, Jianlin Zhao, Kari Halonen, Harri Lipsanen, Xiaomu Wang, Xuetao Gan, Zhipei Sun. A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths. Advanced Functional Materials, 2018, vol. 28, pp. 1804388.
    Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201810245543
    DOI: 10.1002/adfm.201804388 View at publisher
  • [Publication 3]: Jakub Boguslawski, Yadong Wang, Hui Xue, Xiaoxia Yang, Dong Mao, Xuetao Gan, Zhaoyu Ren, Jianlin Zhao, Qing Dai, Grzegorz Sobon, Jaroslaw Sotor, and Zhipei Sun. Graphene Actively Mode-Locked Lasers. Advanced Functional Materials, 2018, vol. 28, no. 28, pp. 1801539.
    Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201806253485
    DOI: 10.1002/adfm.201801539 View at publisher
  • [Publication 4]: Wonjae Kim, Sanna Arpiainen, Hui Xue, Miika Soikkeli, Mei Qi, Zhipei Sun, Harri Lipsanen, Ferney A. Chaves, David Jiménez, Mika Prunnila. Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices. ACS Applied Nano Materials, 2018, vol. 1, no. 8, pp. 3895-3902.
    Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201905062855
    DOI: 10.1021/acsanm.8b00684 View at publisher
  • [Publication 5]: Diao Li, Hui Xue, Yadong Wang, Mei Qi, Wonjae Kim, Changfeng Li, Juha Riikonen, Zhaoyu Ren, Jintao Bai, Harri Lipsanen, Zhipei Sun. Active synchronization and modulation of fiber lasers with a graphene electro-optic modulator, Optics Letters, 2018, vol. 43, no. 15, pp. 3497-3500.
    Full text in Acris/Aaltodoc: http://urn.fi/URN:NBN:fi:aalto-201808214696
    DOI: 10.1364/OL.43.003497 View at publisher
  • [Publication 6]: Diao Li, Hui Xue, Mei Qi, Yadong Wang, Sinan Aksimsek, Nikolai Chekurov, Wonjae Kim, Changfeng Li, Juha Riikonen, Fangwei Ye, Qing Dai, Zhaoyu Ren, Jintao Bai, Tawfique Hasan, Harri Lipsanen, Zhipei Sun. Graphene actively Q-switched lasers. 2D Materials. 2017, vol. 4, no. 2, pp. 025095.
    DOI: 10.1088/2053-1583/aa6e6b View at publisher

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https://urn.fi/URN:ISBN:978-952-60-8895-2

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[diss] Sähkötekniikan korkeakoulu / ELEC