Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorMyllynen, Antti
dc.contributor.authorSadi, Toufik
dc.contributor.authorOksanen, Jani
dc.contributor.departmentDepartment of Neuroscience and Biomedical Engineering
dc.date.accessioned2019-05-06T09:12:38Z
dc.date.available2019-05-06T09:12:38Z
dc.date.issued2019-03-01
dc.description| openaire: EC/H2020/638173/EU//iTPX
dc.description.abstractDiffusion-driven charge transport (DDCT) in III–V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT–LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT–LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance.en
dc.description.versionPeer revieweden
dc.format.extent1-8
dc.format.mimetypeapplication/pdf
dc.identifier.citationMyllynen , A , Sadi , T & Oksanen , J 2019 , ' Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping ' , Optical and Quantum Electronics , vol. 51 , no. 3 , 90 , pp. 1-8 . https://doi.org/10.1007/s11082-019-1806-zen
dc.identifier.doi10.1007/s11082-019-1806-z
dc.identifier.issn0306-8919
dc.identifier.otherPURE UUID: 5dcb3c16-d463-4c0b-a7c8-08deb15524f1
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5dcb3c16-d463-4c0b-a7c8-08deb15524f1
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85063062089&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/32888286/Myllynen2019_Article_Diffusion_drivenGaInPGaAsLight.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/37674
dc.identifier.urnURN:NBN:fi:aalto-201905062794
dc.language.isoenen
dc.publisherSpringer New York
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/638173/EU//iTPX
dc.relation.ispartofseriesOptical and Quantum Electronicsen
dc.relation.ispartofseriesVolume 51, issue 3en
dc.rightsopenAccessen
dc.subject.keywordCurrent spreading
dc.subject.keywordDiffusion-driven charge transport (DDCT)
dc.subject.keywordLateral heterojunction (LHJ)
dc.subject.keywordLight-emitting diode (LED)
dc.subject.keywordModulation doping
dc.titleDiffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation dopingen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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