Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2019-03-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-8
Series
Optical and Quantum Electronics, Volume 51, issue 3
Abstract
Diffusion-driven charge transport (DDCT) in III–V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT–LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT–LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance.
Description
| openaire: EC/H2020/638173/EU//iTPX
Keywords
Current spreading, Diffusion-driven charge transport (DDCT), Lateral heterojunction (LHJ), Light-emitting diode (LED), Modulation doping
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Citation
Myllynen , A , Sadi , T & Oksanen , J 2019 , ' Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping ' , Optical and Quantum Electronics , vol. 51 , no. 3 , 90 , pp. 1-8 . https://doi.org/10.1007/s11082-019-1806-z