Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKhelifati, Nabilen_US
dc.contributor.authorLaine, Hannu S.en_US
dc.contributor.authorVähänissi, Villeen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.authorBouamama, Fatima Zohraen_US
dc.contributor.authorBouhafs, Djoudien_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.organizationResearch Center in Semiconductor Technology for the Energetic (CRTSE)en_US
dc.contributor.organizationFerhat Abbas Sétif University 1en_US
dc.date.accessioned2020-02-12T10:47:45Z
dc.date.available2020-02-12T10:47:45Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2020-07-26en_US
dc.date.issued2019-09en_US
dc.description.abstractThis paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. This article is protected by copyright. All rights reserved.en
dc.description.versionPeer revieweden
dc.format.extent19
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationKhelifati, N, Laine, H S, Vähänissi, V, Savin, H, Bouamama, F Z & Bouhafs, D 2019, ' Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering ', Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 17, 1900253 . https://doi.org/10.1002/pssa.201900253en
dc.identifier.doi10.1002/pssa.201900253en_US
dc.identifier.issn1862-6300
dc.identifier.issn1862-6319
dc.identifier.otherPURE UUID: 46fba5f6-f93e-4437-af6b-0db797355ab1en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/46fba5f6-f93e-4437-af6b-0db797355ab1en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/35820739/ELEC_Khelifati_Dissociation_and_formation_Physica.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/43065
dc.identifier.urnURN:NBN:fi:aalto-202002122134
dc.language.isoenen
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofseriesPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCEen
dc.relation.ispartofseriesVolume 216, issue 17en
dc.rightsopenAccessen
dc.subject.keyworddissociation-associationen_US
dc.subject.keywordgetteringen_US
dc.subject.keywordiron-boron pairsen_US
dc.subject.keywordphosphorus implantationen_US
dc.subject.keywordsiliconen_US
dc.titleDissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Getteringen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
Files