Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Khelifati, Nabil | en_US |
dc.contributor.author | Laine, Hannu S. | en_US |
dc.contributor.author | Vähänissi, Ville | en_US |
dc.contributor.author | Savin, Hele | en_US |
dc.contributor.author | Bouamama, Fatima Zohra | en_US |
dc.contributor.author | Bouhafs, Djoudi | en_US |
dc.contributor.department | Department of Electronics and Nanoengineering | en |
dc.contributor.groupauthor | Hele Savin Group | en |
dc.contributor.organization | Research Center in Semiconductor Technology for the Energetic (CRTSE) | en_US |
dc.contributor.organization | Ferhat Abbas Sétif University 1 | en_US |
dc.date.accessioned | 2020-02-12T10:47:45Z | |
dc.date.available | 2020-02-12T10:47:45Z | |
dc.date.embargo | info:eu-repo/date/embargoEnd/2020-07-26 | en_US |
dc.date.issued | 2019-09 | en_US |
dc.description.abstract | This paper reports the results of a systematic study on the kinetics of dissociation and formation of iron-boron (FeB) pairs in boron-doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures. The aim of this study is threefold: (i) investigation of the dissociation kinetics of the FeB pairs by a standardized illumination as a function of the iron concentration after gettering process (ii) study of the kinetics of their association, and (iii) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. This article is protected by copyright. All rights reserved. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 19 | |
dc.format.mimetype | application/pdf | en_US |
dc.identifier.citation | Khelifati, N, Laine, H S, Vähänissi, V, Savin, H, Bouamama, F Z & Bouhafs, D 2019, ' Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering ', Physica Status Solidi (A) Applications and Materials Science, vol. 216, no. 17, 1900253 . https://doi.org/10.1002/pssa.201900253 | en |
dc.identifier.doi | 10.1002/pssa.201900253 | en_US |
dc.identifier.issn | 1862-6300 | |
dc.identifier.issn | 1862-6319 | |
dc.identifier.other | PURE UUID: 46fba5f6-f93e-4437-af6b-0db797355ab1 | en_US |
dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/46fba5f6-f93e-4437-af6b-0db797355ab1 | en_US |
dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/35820739/ELEC_Khelifati_Dissociation_and_formation_Physica.pdf | en_US |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/43065 | |
dc.identifier.urn | URN:NBN:fi:aalto-202002122134 | |
dc.language.iso | en | en |
dc.publisher | WILEY-V C H VERLAG GMBH | |
dc.relation.ispartofseries | PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE | en |
dc.relation.ispartofseries | Volume 216, issue 17 | en |
dc.rights | openAccess | en |
dc.subject.keyword | dissociation-association | en_US |
dc.subject.keyword | gettering | en_US |
dc.subject.keyword | iron-boron pairs | en_US |
dc.subject.keyword | phosphorus implantation | en_US |
dc.subject.keyword | silicon | en_US |
dc.title | Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |