Nonadiabatic Charge Pumping in a Hybrid Single-Electron Transistor
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© 2008 American Physical Society (APS). http://www.aps.org/
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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066801/1-4
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Physical Review Letters, Volume 101, Issue 6
Abstract
We study theoretically current quantization in the charge turnstile based on the superconductor–normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair–electron cotunneling. The rates of these processes are calculated in the “above-the-threshold” regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10−8, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.Description
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Averin, Dmitri V. & Pekola, Jukka. 2008. Nonadiabatic Charge Pumping in a Hybrid Single-Electron Transistor. Physical Review Letters. Volume 101, Issue 6. P. 066801/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.101.066801.