Electronically induced trapping of hydrogen by impurities in niobium

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorManninen, Matti
dc.contributor.authorPuska, M. J.
dc.contributor.authorNieminen, R. M.
dc.contributor.authorJena, P.
dc.contributor.departmentDepartment of Applied Physics
dc.contributor.departmentUniversity of Jyväskylä
dc.date.accessioned2018-05-22T14:48:07Z
dc.date.available2018-05-22T14:48:07Z
dc.date.issued1984-07-15
dc.description.abstractThe binding energies of hydrogen and its isotopes to substitutional impurities Ti, Cr, and V in niobium have been calculated. The hydrogen-metal interaction is based on the effective-medium theory. The wave mechanics of the hydrogenic interstitials are explicity dealt with, and the lattice distortion created by the hydrogen is incorporated through the method of lattice statics. The difference in the electronic structure between impurity and host atoms is shown to be largely responsible for the binding of hydrogen to the impurities. The results are in agreement with recent inelastic neutron scattering experiments.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extent1065-1068
dc.format.mimetypeapplication/pdf
dc.identifier.citationManninen , M , Puska , M J , Nieminen , R M & Jena , P 1984 , ' Electronically induced trapping of hydrogen by impurities in niobium ' , Physical Review B , vol. 30 , no. 2 , pp. 1065-1068 . https://doi.org/10.1103/PhysRevB.30.1065en
dc.identifier.doi10.1103/PhysRevB.30.1065
dc.identifier.issn0163-1829
dc.identifier.issn1550-235X
dc.identifier.otherPURE UUID: c6507ec1-bac1-4c92-b4c9-c81e73e3a51a
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/c6507ec1-bac1-4c92-b4c9-c81e73e3a51a
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=35949022734&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14710724/PhysRevB.30.1065.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/31163
dc.identifier.urnURN:NBN:fi:aalto-201805222603
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 30, issue 2en
dc.rightsopenAccessen
dc.titleElectronically induced trapping of hydrogen by impurities in niobiumen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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