Silicon Surface Passivation by Al2O3: Effect of ALD Reactants

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRepo, Päivikki
dc.contributor.authorTalvitie, Heli
dc.contributor.authorLi, Shuo
dc.contributor.authorSkarp, Jarmo
dc.contributor.authorSavin, Hele
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-06-02T09:01:11Z
dc.date.available2015-06-02T09:01:11Z
dc.date.issued2011
dc.description.abstractWe have studied the surface passivation of p- and n-type silicon by thermal atomic layer deposited (ALD) Al2O3. The main emphasis is on different ALD reactant combinations and especially on using ozone as an oxidant. Thermal stability of Al2O3 will also be briefly addressed. Our results show that in p-type CZ-Si Al2O3 leads to much higher passivation than thermal oxidation, independent of the reactants. The best minority carrier lifetimes are measured when a combination of Al2O3 and TiO2 is used. In n-type CZ-Si similar results are obtained except the choice of reactants seems to be more crucial. However, the combination of Al2O3 and TiO2 results again in the best passivation with measured lifetimes well above 10 ms corresponding surface recombination velocities of ∼2 cm/s. Finally, we demonstrate that Al2O3 passivation is also applicable in high resistivity n-type FZ-Si and in ∼1 Ωcm p-type multicrystalline Si.en
dc.description.versionPeer revieweden
dc.format.extent681-687
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRepo, Päivikki & Talvitie, Heli & Li, Shuo & Skarp, Jarmo & Savin, Hele. 2011. Silicon Surface Passivation by Al2O3: Effect of ALD Reactants. Energy Procedia. Volume 8. 681-687. ISSN 1876-6102 (printed). DOI: 10.1016/j.egypro.2011.06.201.en
dc.identifier.doi10.1016/j.egypro.2011.06.201
dc.identifier.issn1876-6102 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16407
dc.identifier.urnURN:NBN:fi:aalto-201506013057
dc.language.isoenen
dc.publisherElsevier BVen
dc.relation.ispartofseriesEnergy Procediaen
dc.relation.ispartofseriesVolume 8
dc.rights© 2011 Elsevier BV. This is the post print version of the following article: Repo, Päivikki & Talvitie, Heli & Li, Shuo & Skarp, Jarmo & Savin, Hele. 2011. Silicon Surface Passivation by Al2O3: Effect of ALD Reactants. Energy Procedia. Volume 8. 681-687. ISSN 1876-6102 (printed). DOI: 10.1016/j.egypro.2011.06.201, which has been published in final form at http://www.sciencedirect.com/science/article/pii/S1876610211017103en
dc.rights.holderElsevier BV
dc.subject.keywordAl2O3en
dc.subject.keywordsiliconen
dc.subject.keywordpassivationen
dc.subject.keywordALDen
dc.subject.keywordreactanten
dc.subject.keywordozoneen
dc.subject.otherEnergyen
dc.subject.otherPhysicsen
dc.titleSilicon Surface Passivation by Al2O3: Effect of ALD Reactantsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionPost printen
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