Clustering of vacancy defects in high-purity semi-insulating SiC
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Aavikko, R. | |
dc.contributor.author | Saarinen, K. | |
dc.contributor.author | Tuomisto, Filip | |
dc.contributor.author | Magnusson, B. | |
dc.contributor.author | Son, N. T. | |
dc.contributor.author | Janzen, E. | |
dc.contributor.department | Teknillisen fysiikan laitos | fi |
dc.contributor.department | Department of Applied Physics | en |
dc.contributor.school | Perustieteiden korkeakoulu | fi |
dc.contributor.school | School of Science | en |
dc.date.accessioned | 2015-09-02T09:02:38Z | |
dc.date.available | 2015-09-02T09:02:38Z | |
dc.date.issued | 2007 | |
dc.description.abstract | Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity. | en |
dc.description.version | Peer reviewed | en |
dc.format.extent | 085208/1-8 | |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208 | en |
dc.identifier.doi | 10.1103/physrevb.75.085208 | |
dc.identifier.issn | 1098-0121 (printed) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17568 | |
dc.identifier.urn | URN:NBN:fi:aalto-201509024187 | |
dc.language.iso | en | en |
dc.publisher | American Physical Society (APS) | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | Volume 75, Issue 8 | |
dc.rights | © 2007 American Physical Society (APS). This is the accepted version of the following article: Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.085208. | en |
dc.rights.holder | American Physical Society (APS) | |
dc.subject.keyword | silicon carbide | en |
dc.subject.keyword | vacancy defects | en |
dc.subject.keyword | positron lifetime spectroscopy | en |
dc.subject.other | Physics | en |
dc.title | Clustering of vacancy defects in high-purity semi-insulating SiC | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.dcmitype | text | en |
dc.type.version | Final published version | en |
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