Clustering of vacancy defects in high-purity semi-insulating SiC

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorAavikko, R.
dc.contributor.authorSaarinen, K.
dc.contributor.authorTuomisto, Filip
dc.contributor.authorMagnusson, B.
dc.contributor.authorSon, N. T.
dc.contributor.authorJanzen, E.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-02T09:02:38Z
dc.date.available2015-09-02T09:02:38Z
dc.date.issued2007
dc.description.abstractPositron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.en
dc.description.versionPeer revieweden
dc.format.extent085208/1-8
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208en
dc.identifier.doi10.1103/physrevb.75.085208
dc.identifier.issn1098-0121 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17568
dc.identifier.urnURN:NBN:fi:aalto-201509024187
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 75, Issue 8
dc.rights© 2007 American Physical Society (APS). This is the accepted version of the following article: Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.085208.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordsilicon carbideen
dc.subject.keywordvacancy defectsen
dc.subject.keywordpositron lifetime spectroscopyen
dc.subject.otherPhysicsen
dc.titleClustering of vacancy defects in high-purity semi-insulating SiCen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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