Clustering of vacancy defects in high-purity semi-insulating SiC
Loading...
Access rights
© 2007 American Physical Society (APS). This is the accepted version of the following article: Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.085208.
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
085208/1-8
Series
Physical Review B, Volume 75, Issue 8
Abstract
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Description
Other note
Citation
Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208