Clustering of vacancy defects in high-purity semi-insulating SiC
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© 2007 American Physical Society (APS). This is the accepted version of the following article: Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.085208.
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Date
2007
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Language
en
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085208/1-8
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Physical Review B, Volume 75, Issue 8
Abstract
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity in both as-grown and annealed materials. Our results suggest that Si-vacancy-related complexes electrically compensate the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Description
Keywords
silicon carbide, vacancy defects, positron lifetime spectroscopy
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Citation
Aavikko, R. & Saarinen, K. & Tuomisto, Filip & Magnusson, B. & Son, N. T. & Janzen, E. 2007. Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B. Volume 75, Issue 8. 085208/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.085208