Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2020-04
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Mcode
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Language
en
Pages
11
Series
2D Materials, Volume 7, issue 2
Abstract
By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS 2 to 500 eV Xe + irradiation is obtained. The MoS 2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of 1.5 × 10 14 ions cm -2 and without inducing damage underneath the MoS 2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.
Description
| openaire: EC/H2020/648589/EU//SUPER-2D
Keywords
MoS2, molecular dynamics simulation, graphene, Ir(111), ion irradiation, scanning tunneling microscopy, phase transformation, TRANSITION, EVOLUTION
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Citation
Valerius, P, Kretschmer, S, Senkovskiy, B V, Wu, S, Hall, J, Herman, A, Ehlen, N, Ghorbani-Asl, M, Grueneis, A, Krasheninnikov, A V & Michely, T 2020, ' Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation ', 2D Materials, vol. 7, no. 2, 025005 . https://doi.org/10.1088/2053-1583/ab5df4