Atomic/molecular layer deposition of hybrid inorganic–organic thin films from erbium guanidinate precursor
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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9
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Journal of Materials Science, Volume 52, issue 11, pp. 6216-6224
Abstract
Luminescent erbium-based inorganic–organic hybrid materials play an important role in many frontier nano-sized applications, such as amplifiers, detectors and OLEDs. Here, we demonstrate the possibility to fabricate high-quality thin films comprising both erbium and an appropriate organic molecule as a luminescence sensitizer utilizing the combined atomic layer deposition and molecular layer deposition (ALD/MLD) technique. We employ tris(N,N′-diisopropyl-2-dimethylamido guanidinato)erbium(III) [Er(DPDMG)3] together with 3,5-pyridine dicarboxylic acid as precursors. With the appreciably high film deposition rate achieved (6.4 Å cycle−1), the guanidinate precursor indeed appears as an interesting new addition to the ALD/MLD precursor variety toward novel materials. Our erbium–organic thin films showed highly promising UV absorption properties and a photoluminescence at 1535 nm for a 325-nm excitation, relevant to possible future luminescence applications.Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
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Mai, L, Giedraityte, Z, Schmidt, M, Rogalla, D, Scholz, S, Wieck, A D, Devi, A & Karppinen, M 2017, 'Atomic/molecular layer deposition of hybrid inorganic–organic thin films from erbium guanidinate precursor', Journal of Materials Science, vol. 52, no. 11, pp. 6216-6224. https://doi.org/10.1007/s10853-017-0855-6