Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1996
Major/Subject
Mcode
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Language
en
Pages
3
4029-4031
Series
APPLIED PHYSICS LETTERS, Volume 69, issue 26
Abstract
GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.
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Keywords
optoelectronics, semiconductors
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Citation
Sopanen , M , Lipsanen , H & Ahopelto , J 1996 , ' Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching ' , Applied Physics Letters , vol. 69 , no. 26 , pp. 4029-4031 . https://doi.org/10.1063/1.117860