Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 69, issue 26, pp. 4029-4031
Abstract
GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.Description
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Sopanen, M, Lipsanen, H & Ahopelto, J 1996, 'Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching', Applied Physics Letters, vol. 69, no. 26, pp. 4029-4031. https://doi.org/10.1063/1.117860