Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKim, Wonjae
dc.contributor.authorArpiainen, Sanna
dc.contributor.authorXue, Hui
dc.contributor.authorSoikkeli, Miika
dc.contributor.authorQi, Mei
dc.contributor.authorSun, Zhipei
dc.contributor.authorLipsanen, Harri
dc.contributor.authorChaves, Ferney A.
dc.contributor.authorJimenez, David
dc.contributor.authorPrunnila, Mika
dc.contributor.departmentVTT Technical Research Centre of Finland
dc.contributor.departmentCentre of Excellence in Quantum Technology, QTF
dc.contributor.departmentDepartment of Electronics and Nanoengineering
dc.contributor.departmentAutonomous University of Barcelona
dc.contributor.departmentAalto University
dc.contributor.departmentDepartment of Applied Physicsen
dc.date.accessioned2019-05-06T09:20:51Z
dc.date.available2019-05-06T09:20:51Z
dc.date.issued2018-08
dc.description| openaire: EC/H2020/785219/EU//GrapheneCore2
dc.description.abstractBecause of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.en
dc.description.versionPeer revieweden
dc.format.extent15
dc.format.extent3895-3902
dc.format.mimetypeapplication/pdf
dc.identifier.citationKim , W , Arpiainen , S , Xue , H , Soikkeli , M , Qi , M , Sun , Z , Lipsanen , H , Chaves , F A , Jimenez , D & Prunnila , M 2018 , ' Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices ' , ACS Applied Nano Materials , vol. 1 , no. 8 , pp. 3895-3902 . https://doi.org/10.1021/acsanm.8b00684en
dc.identifier.doi10.1021/acsanm.8b00684
dc.identifier.issn2574-0970
dc.identifier.otherPURE UUID: a462f99a-84d8-4ccd-9ab6-df9546397cca
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/a462f99a-84d8-4ccd-9ab6-df9546397cca
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/32948814/ELEC_Kim_photoresponse_of_graphene_gated_ACSANM.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/37737
dc.identifier.urnURN:NBN:fi:aalto-201905062855
dc.language.isoenen
dc.publisherAMER CHEMICAL SOC
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/785219/EU//GrapheneCore2
dc.relation.ispartofseriesACS Applied Nano Materialsen
dc.relation.ispartofseriesVolume 1, issue 8en
dc.rightsopenAccessen
dc.subject.keywordgraphene
dc.subject.keywordGaSe
dc.subject.keywordheterojunction
dc.subject.keywordSchottky
dc.subject.keywordphotodetector
dc.subject.keywordBAND-GAP
dc.subject.keywordLAYER
dc.subject.keywordPERFORMANCE
dc.subject.keywordPHOTODETECTORS
dc.subject.keywordHYBRID
dc.subject.keywordMONO
dc.titlePhotoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devicesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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