Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices

Loading...
Thumbnail Image

Access rights

openAccess
publishedVersion

URL

Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2018-08

Major/Subject

Mcode

Degree programme

Language

en

Pages

15

Series

ACS Applied Nano Materials, Volume 1, issue 8, pp. 3895-3902

Abstract

Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.

Description

| openaire: EC/H2020/785219/EU//GrapheneCore2

Keywords

graphene, GaSe, heterojunction, Schottky, photodetector, BAND-GAP, LAYER, PERFORMANCE, PHOTODETECTORS, HYBRID, MONO

Other note

Citation

Kim, W, Arpiainen, S, Xue, H, Soikkeli, M, Qi, M, Sun, Z, Lipsanen, H, Chaves, F A, Jimenez, D & Prunnila, M 2018, ' Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices ', ACS Applied Nano Materials, vol. 1, no. 8, pp. 3895-3902 . https://doi.org/10.1021/acsanm.8b00684