Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2013

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Department of Micro and Nanosciences

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Mcode

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Language

en

Pages

6

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Journal of Applied Physics, Volume 113, issue 14, pp. 1-6

Abstract

(Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.

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DOI

10.1063/1.4799624

Citation

Bouravleuv, A, Cirlin, G, Sapega, V, Werner, P, Savin, A & Lipsanen, H 2013, 'Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy', Journal of Applied Physics, vol. 113, no. 14, 144303, pp. 1-6. https://doi.org/10.1063/1.4799624

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https://urn.fi/URN:NBN:fi:aalto-202510087910

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