Accelerated light-induced degradation for detecting copper contamination in p-type silicon
| dc.contributor | Aalto-yliopisto | fi |
| dc.contributor | Aalto University | en |
| dc.contributor.author | Inglese, Alessandro | |
| dc.contributor.author | Lindroos, Jeanette | |
| dc.contributor.author | Savin, Hele | |
| dc.contributor.department | Department of Micro and Nanosciences | en |
| dc.contributor.groupauthor | Hele Savin Group | en |
| dc.date.accessioned | 2025-10-08T06:24:14Z | |
| dc.date.available | 2025-10-08T06:24:14Z | |
| dc.date.issued | 2015 | |
| dc.description | VK: T40310 | |
| dc.description.version | Peer reviewed | en |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Inglese, A, Lindroos, J & Savin, H 2015, 'Accelerated light-induced degradation for detecting copper contamination in p-type silicon', Applied Physics Letters, vol. 107, no. 5. https://doi.org/10.1063/1.4927838 | en |
| dc.identifier.doi | 10.1063/1.4927838 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.other | PURE UUID: 1a45a8c2-cad2-4e18-a087-6fcd262ee1c4 | |
| dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/1a45a8c2-cad2-4e18-a087-6fcd262ee1c4 | |
| dc.identifier.other | PURE LINK: http://dx.doi.org/10.1063/1.4927838 | |
| dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/7392673/savin_accelerated_light_induced_2015.pdf | |
| dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/139410 | |
| dc.identifier.urn | URN:NBN:fi:aalto-202510087591 | |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | |
| dc.relation.ispartofseries | Applied Physics Letters | en |
| dc.relation.ispartofseries | Volume 107, issue 5 | en |
| dc.rights | openAccess | en |
| dc.subject.keyword | accelerated light-induced degradation | |
| dc.subject.keyword | copper defects | |
| dc.subject.keyword | copper recovery | |
| dc.title | Accelerated light-induced degradation for detecting copper contamination in p-type silicon | en |
| dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
| dc.type.version | publishedVersion |
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