Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorBroas, Mikael
dc.contributor.authorSippola, Perttu
dc.contributor.authorSajavaara, Timo
dc.contributor.authorVuorinen, Vesa
dc.contributor.authorPyymaki Perros, Alexander
dc.contributor.authorLipsanen, Harri
dc.contributor.authorPaulasto-Kröckel, Mervi
dc.contributor.departmentDepartment of Electrical Engineering and Automation
dc.contributor.departmentDepartment of Micro and Nanosciences
dc.contributor.departmentUniversity of Jyväskylä
dc.date.accessioned2017-10-13T10:31:58Z
dc.date.available2017-10-13T10:31:58Z
dc.date.issued2016-07-01
dc.description.abstractPlasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.en
dc.description.versionPeer revieweden
dc.format.extent10
dc.format.extent1-10
dc.format.mimetypeapplication/pdf
dc.identifier.citationBroas , M , Sippola , P , Sajavaara , T , Vuorinen , V , Pyymaki Perros , A , Lipsanen , H & Paulasto-Kröckel , M 2016 , ' Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films ' , JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A , vol. 34 , no. 4 , 041506 , pp. 1-10 . https://doi.org/10.1116/1.4953029en
dc.identifier.doi10.1116/1.4953029
dc.identifier.issn0734-2101
dc.identifier.issn1520-8559
dc.identifier.otherPURE UUID: 17af85b5-dc25-4b34-8e0f-9f70a894a7dd
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/17af85b5-dc25-4b34-8e0f-9f70a894a7dd
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=84974566715&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14809849/1.4953029.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/28129
dc.identifier.urnURN:NBN:fi:aalto-201710136990
dc.language.isoenen
dc.relation.ispartofseriesJOURNAL OF VACUUM SCIENCE AND TECHNOLOGY Aen
dc.relation.ispartofseriesVolume 34, issue 4en
dc.rightsopenAccessen
dc.titleStructural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride filmsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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