Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-12-27
Major/Subject
Mcode
Degree programme
Language
en
Pages
8
14727–14734
Series
ACS Applied Energy Materials, Volume 4, issue 12
Abstract
III-V semiconductor nanowires have shown promise for thermoelectric applications, but their use in practical devices has conventionally been hindered by complex fabrication processes and device integration. Here, we characterize the thermoelectric properties of InAs nanowire networks directly grown on flexible polyimide plastic. The n-type nanowire networks achieve a high room-temperature Seebeck coefficient of -110.8 mu V K-1 and electrical conductivity of 41 S cm(-1), resulting in a thermoelectric power factor of 50.4 mu W m(-1) K-2. Moreover, the nanowire networks show remarkable mechanical flexibility with a relative change in resistance below 0.01 at bending radii below 5.2 mm. We further establish the thermoelectric performance of InAs nanowire networks on plastic using a facile proof-of-concept thermoelectric generator producing a maximum power of 0.44 nW at a temperature gradient of 5 K. The findings indicate that direct growth of III-V nanowire networks on plastic substrates shows promise for the development of flexible thermoelectrics applications.
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Publisher Copyright: ©
Keywords
flexible, III-V, indium arsenide, MOVPE, nanowire, thermoelectric
Other note
Citation
Koskinen , T , Khayrudinov , V , Emadi , F , Jiang , H , Haggren , T , Lipsanen , H & Tittonen , I 2021 , ' Thermoelectric Characteristics of InAs Nanowire Networks Directly Grown on Flexible Plastic Substrates ' , ACS Applied Energy Materials , vol. 4 , no. 12 , pp. 14727–14734 . https://doi.org/10.1021/acsaem.1c03405