Nonadiabatic charge pumping in a hybrid single-electron taransistor

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

2008-08-04

Department

Department of Applied Physics

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Mcode

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Language

en

Pages

4

Series

Physical Review Letters, Volume 101, issue 6, pp. 1-4

Abstract

We study theoretically current quantization in the charge turnstile based on the superconductor–normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair–electron cotunneling. The rates of these processes are calculated in the “above-the-threshold” regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10−8, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.

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Keywords

charge pumping, single-electron transistor

Other note

DOI

10.1103/PhysRevLett.101.066801

Citation

Averin, D & pekola, J 2008, 'Nonadiabatic charge pumping in a hybrid single-electron taransistor', Physical Review Letters, vol. 101, no. 6, 066801, pp. 1-4. https://doi.org/10.1103/PhysRevLett.101.066801

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201805222378

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[article-cris] Perustieteiden korkeakoulu / SCI