Nonadiabatic charge pumping in a hybrid single-electron taransistor

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Author
Date
2008-08-04
Department
Department of Applied Physics
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
1-4
Series
PHYSICAL REVIEW LETTERS, Volume 101, issue 6
Abstract
We study theoretically current quantization in the charge turnstile based on the superconductor–normal-metal single-electron transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper-pair–electron cotunneling. The rates of these processes are calculated in the “above-the-threshold” regime when they compete directly with the lowest-order tunneling. By shaping the ac gate voltage drive it should be possible to achieve the metrological accuracy of 10−8, while maintaining the quantized current on the level of 30 pA, just by one turnstile with realistic parameters using aluminum as a superconductor.
Description
Keywords
charge pumping, single-electron transistor
Other note
DOI
10.1103/PhysRevLett.101.066801
Citation
Averin , D & pekola , J 2008 , ' Nonadiabatic charge pumping in a hybrid single-electron taransistor ' , Physical Review Letters , vol. 101 , no. 6 , 066801 , pp. 1-4 . https://doi.org/10.1103/PhysRevLett.101.066801
Permanent link to this item
https://urn.fi/URN:NBN:fi:aalto-201805222378
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[article-cris] Perustieteiden korkeakoulu / SCI