Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorDai, Yunyun
dc.contributor.authorWang, Yadong
dc.contributor.authorDas, Susobhan
dc.contributor.authorXue, Hui
dc.contributor.authorBai, Xueyin
dc.contributor.authorHulkko, Eero
dc.contributor.authorZhang, Guangyu
dc.contributor.authorYang, Xiaoxia
dc.contributor.authorDai, Qing
dc.contributor.authorSun, Zhipei
dc.contributor.departmentDepartment of Electronics and Nanoengineering
dc.contributor.departmentCentre of Excellence in Quantum Technology, QTF
dc.contributor.departmentChinese Academy of Sciences
dc.contributor.departmentNational Center for Nanoscience and Technology Beijing
dc.contributor.departmentDepartment of Applied Physicsen
dc.date.accessioned2020-11-30T08:10:22Z
dc.date.available2020-11-30T08:10:22Z
dc.date.issued2020-07-28
dc.description| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP
dc.description.abstractMonolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.en
dc.description.versionPeer revieweden
dc.format.extent7
dc.format.extent8442-8448
dc.format.mimetypeapplication/pdf
dc.identifier.citationDai , Y , Wang , Y , Das , S , Xue , H , Bai , X , Hulkko , E , Zhang , G , Yang , X , Dai , Q & Sun , Z 2020 , ' Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS 2 ' , ACS Nano , vol. 14 , no. 7 , pp. 8442-8448 . https://doi.org/10.1021/acsnano.0c02642en
dc.identifier.doi10.1021/acsnano.0c02642
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.otherPURE UUID: 03307785-5f40-49c1-8dce-55e053cbda4d
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/03307785-5f40-49c1-8dce-55e053cbda4d
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85089707761&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/53349147/Dai_Electrical_control_of_interband_ACSNano.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/61627
dc.identifier.urnURN:NBN:fi:aalto-2020113020472
dc.language.isoenen
dc.publisherAMERICAN CHEMICAL SOCIETY
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/834742/EU//ATOP
dc.relation.ispartofseriesACS Nanoen
dc.relation.ispartofseriesVolume 14, issue 7en
dc.rightsopenAccessen
dc.subject.keywordexciton
dc.subject.keywordfour-wave mixing
dc.subject.keywordgate tunability
dc.subject.keywordMoS2
dc.subject.keywordnonlinear optics
dc.subject.keywordsum-frequency generation
dc.titleElectrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2en
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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