Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2
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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2020-07-28
Major/Subject
Mcode
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Language
en
Pages
7
8442-8448
8442-8448
Series
ACS Nano, Volume 14, issue 7
Abstract
Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.Description
| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP
Keywords
exciton, four-wave mixing, gate tunability, MoS2, nonlinear optics, sum-frequency generation
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Citation
Dai, Y, Wang, Y, Das, S, Xue, H, Bai, X, Hulkko, E, Zhang, G, Yang, X, Dai, Q & Sun, Z 2020, ' Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS 2 ', ACS Nano, vol. 14, no. 7, pp. 8442-8448 . https://doi.org/10.1021/acsnano.0c02642
