Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2005

Department

Department of Applied Physics

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Language

en

Pages

3

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Applied Physics Letters, Volume 86, issue 3, pp. 1-3

Abstract

We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.

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Keywords

cluster, GaN, impurity, polarity, vacancy

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DOI

10.1063/1.1854745

Citation

Tuomisto, F, Saarinen, K, Lucznik, B, Grzegory, I, Teisseyre, H, Suski, T, Porowski, S, Hageman, P R & Likonen, J 2005, 'Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN', Applied Physics Letters, vol. 86, no. 3, 031915, pp. 1-3. https://doi.org/10.1063/1.1854745

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https://urn.fi/URN:NBN:fi:aalto-202510087920

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[article-cris] Perustieteiden korkeakoulu / SCI