Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorAndresen, S. E. S.
dc.contributor.authorWu, F.
dc.contributor.authorDanneau, R.
dc.contributor.authorGunnarsson, D.
dc.contributor.authorHakonen, Pertti J.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-25T09:01:47Z
dc.date.available2015-09-25T09:01:47Z
dc.date.issued2008
dc.description.abstractWe have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3×10 exp −6e/√Hz over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7×10 exp 13 Hz exp (3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors.en
dc.description.versionPeer revieweden
dc.format.extent033715/1-4
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAndresen, S. E. S. & Wu, F. & Danneau, R. & Gunnarsson, D. & Hakonen, Pertti J.. 2008. Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor. Journal of Applied Physics. Volume 104, Issue 3. 033715/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.2968123en
dc.identifier.doi10.1063/1.2968123
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17880
dc.identifier.urnURN:NBN:fi:aalto-201509254474
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 104, Issue 3
dc.rights© 2008 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 104, Issue 3 and may be found at http://scitation.aip.org/content/aip/journal/jap/104/3/10.1063/1.2968123.en
dc.rights.holderAIP Publishing
dc.subject.keywordcarbon nanotubesen
dc.subject.keywordsingle-electron transistors (SET)en
dc.subject.otherPhysicsen
dc.titleHighly sensitive and broadband carbon nanotube radio-frequency single-electron transistoren
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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