Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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© 2008 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 104, Issue 3 and may be found at http://scitation.aip.org/content/aip/journal/jap/104/3/10.1063/1.2968123.
Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
033715/1-4
Series
Journal of Applied Physics, Volume 104, Issue 3
Abstract
We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3×10 exp −6e/√Hz over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7×10 exp 13 Hz exp (3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors.
Description
Keywords
carbon nanotubes, single-electron transistors (SET)
Other note
Citation
Andresen, S. E. S. & Wu, F. & Danneau, R. & Gunnarsson, D. & Hakonen, Pertti J.. 2008. Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor. Journal of Applied Physics. Volume 104, Issue 3. 033715/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.2968123