Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPhilip, Anishen_US
dc.contributor.authorMai, Lukasen_US
dc.contributor.authorGhiyasi, Raminen_US
dc.contributor.authorDevi, Anjanaen_US
dc.contributor.authorKarppinen, Maariten_US
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.groupauthorInorganic Materials Chemistryen
dc.contributor.organizationRuhr University Bochumen_US
dc.date.accessioned2022-10-19T06:46:33Z
dc.date.available2022-10-19T06:46:33Z
dc.date.issued2022-10-14en_US
dc.descriptionPublisher Copyright: © 2022 The Royal Society of Chemistry.
dc.description.abstractThe combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a state-of-the-art synthesis route for new metal-organic thin-film materials with a multitude of properties by combining those of the inorganic and the organic material. A major part of the studies so far reported have focused on aluminum or zinc alkyls, so-called alucone and zincone films, typically grown from trimethyl aluminum (TMA) or diethyl zinc (DEZ) as the metal-bearing precursor, and a simple aliphatic bi-functional alcohol molecule such as ethylene glycol (EG) as the organic precursor. However, these common precursors possess certain disadvantages: both TMA and DEZ are pyrophoric, DEZ being additionally thermally unstable, while EG has a strong tendency for various unideal reaction modes. Here we report novel ALD/MLD processes for alucone and zincone films based on non-pyrophoric bis-diisopropylamido-[3-(N,N-dimethylamino)propyl] aluminum(iii) [Al(NiPr2)2(DMP)] and bis-3-(N,N-dimethylamino)propyl zinc(ii) [Zn(DMP)2] precursors in combination with hydroquinone (HQ) as the organic precursor. We demonstrate that the [Al(NiPr2)2(DMP)] + HQ and [Zn(DMP)2] + HQ ALD/MLD processes work even at record low deposition temperatures (140 °C and 60 °C, respectively) yielding high-quality and relatively stable Al-HQ and Zn-HQ thin films with appreciably high growth rates (2.8 Å / cycle and 3.2 Å / cycle, respectively). Moreover, these ALD/MLD processes are compatible with the corresponding ALD processes, i.e. [Al(NiPr2)2(DMP)] + H2O and [Zn(DMP)2] + H2O, for the Al2O3 and ZnO films, thus opening up new horizons for the fabrication of novel metal-oxide : organic superlattice structures for e.g. flexible gas-barrier coatings or wearable thermoelectrics.en
dc.description.versionPeer revieweden
dc.format.extent14508-14516
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationPhilip, A, Mai, L, Ghiyasi, R, Devi, A & Karppinen, M 2022, ' Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors ', Dalton Transactions, vol. 51, no. 38, pp. 14508-14516 . https://doi.org/10.1039/d2dt02279fen
dc.identifier.doi10.1039/d2dt02279fen_US
dc.identifier.issn1477-9226
dc.identifier.issn1477-9234
dc.identifier.otherPURE UUID: c12c2b9e-194d-4aa0-9dd3-9efa09424ad7en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/c12c2b9e-194d-4aa0-9dd3-9efa09424ad7en_US
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dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/89617692/CHEM_Philip_et_al_Low_temperature_ALD_MLD_growth_2022_Dalton_Transactions.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/117273
dc.identifier.urnURN:NBN:fi:aalto-202210196061
dc.language.isoenen
dc.publisherRoyal Society of Chemistry
dc.relation.ispartofseriesDalton Transactionsen
dc.relation.ispartofseriesVolume 51, issue 38en
dc.rightsopenAccessen
dc.titleLow-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursorsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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