GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorChellu, Abhiroopen_US
dc.contributor.authorKoivusalo, Eeroen_US
dc.contributor.authorRaappana, Mariannaen_US
dc.contributor.authorRanta, Sannaen_US
dc.contributor.authorPolojärvi, Villeen_US
dc.contributor.authorTukiainen, Anttien_US
dc.contributor.authorLahtonen, Kimmoen_US
dc.contributor.authorSaari, Jesseen_US
dc.contributor.authorValden, Mikaen_US
dc.contributor.authorSeppänen, Helien_US
dc.contributor.authorLipsanen, Harrien_US
dc.contributor.authorGuina, Mirceaen_US
dc.contributor.authorHakkarainen, Teemuen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHarri Lipsanen Groupen
dc.contributor.organizationTampere Universityen_US
dc.date.accessioned2021-03-31T06:14:49Z
dc.date.available2021-03-31T06:14:49Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2022-03-27en_US
dc.date.issued2021-03-26en_US
dc.description.abstractSeveral passivation techniques are developed and compared in terms of their ability to preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In particular, the influence of N-passivation by hydrazine chemical treatment, N-passivation by hydrazine followed by atomic layer deposition (ALD) of AlOx and use of AlNx deposited by plasma-enhanced ALD are reported. The effectiveness of the passivation is benchmarked by measuring the emission linewidths and decay rates of photo-carriers for the near-surface QDs. All three passivation mechanisms resulted in reducing the oxidation of Ga and As atoms at the GaAs surface and consequently in enhancing the room-temperature photoluminescence (PL) intensity. However, long-term stability of the passivation effect is exhibited only by the hydrazine + AlOx process and more significantly by the AlNx method. Moreover, in contrast to the results obtained from hydrazine-based methods, the AlNx passivation strongly reduces the spectral diffusion of the QD exciton lines caused by charge fluctuations at the GaAs surface. The AlNx passivation is found to reduce the surface recombination velocity by three orders of magnitude (corresponding to an increase of room-temperature PL signal by ∼1030 times). The reduction of surface recombination velocity is demonstrated on surface-sensitive GaAs (100) and the passivating effect is stable for more than one year. This effective method of passivation, coupled with its stability in time, is extremely promising for practical device applications such as quantum light sources based on InAs/GaAs QDs positioned in small-volume photonic cavities and hence in the proximity of GaAs-air interface.en
dc.description.versionPeer revieweden
dc.format.extent12
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationChellu, A, Koivusalo, E, Raappana, M, Ranta, S, Polojärvi, V, Tukiainen, A, Lahtonen, K, Saari, J, Valden, M, Seppänen, H, Lipsanen, H, Guina, M & Hakkarainen, T 2021, ' GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices ', Nanotechnology, vol. 32, no. 13, 130001 . https://doi.org/10.1088/1361-6528/abd0b4en
dc.identifier.doi10.1088/1361-6528/abd0b4en_US
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.otherPURE UUID: 74486b0e-90b0-45fa-9d76-8dd371bb268ben_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/74486b0e-90b0-45fa-9d76-8dd371bb268ben_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85099245198&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/61183928/Chellu_2020_Nanotechnology_10.1088_1361_6528_abd0b4.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/103427
dc.identifier.urnURN:NBN:fi:aalto-202103312700
dc.language.isoenen
dc.publisherIOP Publishing Ltd.
dc.relation.ispartofseriesNanotechnologyen
dc.relation.ispartofseriesVolume 32, issue 13en
dc.rightsopenAccessen
dc.subject.keywordGaAs (100)en_US
dc.subject.keywordPhotoluminescenceen_US
dc.subject.keywordQuantum dotsen_US
dc.subject.keywordQuantum-confined stark effecten_US
dc.subject.keywordSpectral diffusionen_US
dc.subject.keywordSurface passivationen_US
dc.subject.keywordSurface statesen_US
dc.titleGaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devicesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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