Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy
Loading...
Access rights
openAccess
Journal Title
Journal ISSN
Volume Title
A4 Artikkeli konferenssijulkaisussa
This publication is imported from Aalto University research portal.
View publication in the Research portal
View/Open full text file from the Research portal
Other link related to publication
View publication in the Research portal
View/Open full text file from the Research portal
Other link related to publication
Date
2019-01-01
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-8
Series
Oxide-Based Materials and Devices X, Proceedings of SPIE, Volume 10919
Abstract
We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .Description
Keywords
Compensation, Defect, Gallium oxide, Positron annihilation spectroscopy, Vacancy
Other note
Citation
Tuomisto, F, Karjalainen, A, Prozheeva, V, Makkonen, I, Wagner, G & Baldini, M 2019, Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy . in D J Rogers, F H Teherani & D C Look (eds), Oxide-Based Materials and Devices X ., 1091910, Proceedings of SPIE, vol. 10919, SPIE, pp. 1-8, Oxide-Based Materials and Devices, San Francisco, California, United States, 03/02/2019 . https://doi.org/10.1117/12.2518888