Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

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Journal Title
Journal ISSN
Volume Title
A4 Artikkeli konferenssijulkaisussa
Date
2019-01-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-8
Series
Oxide-Based Materials and Devices X, Proceedings of SPIE, Volume 10919
Abstract
We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .
Description
Keywords
Compensation, Defect, Gallium oxide, Positron annihilation spectroscopy, Vacancy
Other note
Citation
Tuomisto, F, Karjalainen, A, Prozheeva, V, Makkonen, I, Wagner, G & Baldini, M 2019, Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy . in D J Rogers, F H Teherani & D C Look (eds), Oxide-Based Materials and Devices X ., 1091910, Proceedings of SPIE, vol. 10919, SPIE, pp. 1-8, Oxide-Based Materials and Devices, San Francisco, California, United States, 03/02/2019 . https://doi.org/10.1117/12.2518888