Temperature dependence of carrier relaxation in strain-induced quantum dots

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© 1998 American Physical Society (APS). http://www.aps.org/
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1998
Major/Subject
Mcode
Degree programme
Language
en
Pages
R15993-R15996
Series
Physical Review B, Volume 58, Issue 24
Abstract
We report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism.
Description
Keywords
carrier relaxation, quantum dots
Other note
Citation
Braskén, M. & Lindberg, M. & Sopanen, M. & Lipsanen, Harri & Tulkki, J.. 1998. Temperature dependence of carrier relaxation in strain-induced quantum dots. Physical Review B. Volume 58, Issue 24. P. R15993-R15996. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.58.r15993.