Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2018

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Department of Neuroscience and Biomedical Engineering

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en

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IEEE Transactions on Electron Devices, Volume 65, issue 9, pp. 3884-3892

Abstract

In this paper, we report a hierarchical simulation study of the electromigration (EM) problem in Cu-carbon nanotube (CNT) composite interconnects. This paper is based on the investigation of the activation energy and self-heating temperature using a multiscale electrothermal simulation framework. We first investigate the electrical and thermal properties of Cu-CNT composites, including contact resistances, using the density functional theory and reactive force field approaches, respectively. The corresponding results are employed in macroscopic electrothermal simulations taking into account the self-heating phenomenon. Our simulations show that although Cu atoms have similar activation energies in both bulk Cu and Cu-CNT composites, Cu-CNT composite interconnects are more resistant to EM thanks to the large Lorenz number of the CNTs. Moreover, we found that a large and homogenous conductivity along the transport direction in interconnects is one of the most important design rules to minimize the EM.

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Keywords

Conductivity, Contacts, Cu-carbon nanotubes (CNT) composites, density functional theory (DFT), Discrete Fourier transforms, Electromigration, electromigration (EM), electrothermal, interconnects, Lattices, multiscale simulation, Resistance, self-heating., Thermal conductivity

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DOI

10.1109/TED.2018.2853550

Citation

Lee, J, Berrada, S, Adamu-Lema, F, Nagy, N, Georgiev, V P, Sadi, T, Liang, J, Ramos, R, Carrillo-Nunez, H, Kalita, D, Lilienthal, K, Wislicenus, M, Pandey, R, Chen, B, Teo, K B K, Goncalves, G, Okuno, H, Uhlig, B, Todri-Sanial, A, Dijon, J & Asenov, A 2018, 'Understanding Electromigration in Cu-CNT Composite Interconnects : A Multiscale Electrothermal Simulation Study', IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 3884-3892. https://doi.org/10.1109/TED.2018.2853550

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https://urn.fi/URN:NBN:fi:aalto-201809044930

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[article-cris] Perustieteiden korkeakoulu / SCI