Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRadevici, Ivan
dc.contributor.authorTiira, Jonna
dc.contributor.authorSadi, Toufik
dc.contributor.authorOksanen, Jani
dc.contributor.departmentDepartment of Neuroscience and Biomedical Engineering
dc.date.accessioned2018-08-21T13:44:38Z
dc.date.available2018-08-21T13:44:38Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2019-03-29
dc.date.issued2018-03-29
dc.description| openaire: EC/H2020/638173/EU//iTPX
dc.description.abstractCurrent crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdf
dc.identifier.citationRadevici , I , Tiira , J , Sadi , T & Oksanen , J 2018 , ' Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling ' , Semiconductor Science and Technology , vol. 33 , no. 5 , 05LT01 . https://doi.org/10.1088/1361-6641/aab6c3en
dc.identifier.doi10.1088/1361-6641/aab6c3
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.otherPURE UUID: 5f04e397-2bf3-4800-8514-6cddfd6f1d08
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5f04e397-2bf3-4800-8514-6cddfd6f1d08
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85046546120&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/27334577/SST_manuscript.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/33496
dc.identifier.urnURN:NBN:fi:aalto-201808214629
dc.language.isoenen
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/638173/EU//iTPX
dc.relation.ispartofseriesSEMICONDUCTOR SCIENCE AND TECHNOLOGYen
dc.relation.ispartofseriesVolume 33, issue 5en
dc.rightsopenAccessen
dc.subject.keywordcurrent spreading
dc.subject.keyworddouble diode structures
dc.subject.keywordelectroluminescent cooling
dc.subject.keywordIIIV semiconductors
dc.subject.keywordquantum efficiency
dc.subject.keywordradiative and non-radiative recombination
dc.titleInfluence of photo-generated carriers on current spreading in double diode structures for electroluminescent coolingen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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