Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLingk, C.
dc.contributor.authorHelfer, W.
dc.contributor.authorvon Plessen, G.
dc.contributor.authorFeldmann, J.
dc.contributor.authorStock, K.
dc.contributor.authorFeise, M. W.
dc.contributor.authorCitrin, D. S.
dc.contributor.authorLipsanen, Harri
dc.contributor.authorSopanen, Markku
dc.contributor.authorVirkkala, R.
dc.contributor.authorTulkki, J.
dc.contributor.authorAhopelto, J.
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-05-15T09:00:52Z
dc.date.available2015-05-15T09:00:52Z
dc.date.issued2000
dc.description.abstractWe investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.en
dc.description.versionPeer revieweden
dc.format.extent13588-13594
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLingk, C. & Helfer, W. & von Plessen, G. & Feldmann, J. & Stock, K. & Feise, M. W. & Citrin, D. S. & Lipsanen, Harri & Sopanen, M. & Virkkala, R. & Tulkki, J. & Ahopelto, J.. 2000. Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures. Physical Review B. Volume 62, Issue 20. P. 13588-13594. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.62.13588.en
dc.identifier.doi10.1103/physrevb.62.13588
dc.identifier.issn1098-0121 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16045
dc.identifier.urnURN:NBN:fi:aalto-201505152695
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 62, Issue 20
dc.rights© 2000 American Physical Society (APS). http://www.aps.org/en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordcarrier capture processesen
dc.subject.keywordquantum dotsen
dc.subject.keywordquantum wellsen
dc.subject.keywordphotoluminescence spectroscopyen
dc.subject.otherPhysicsen
dc.titleCarrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structuresen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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