Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures

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© 2000 American Physical Society (APS). http://www.aps.org/

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Volume Title

School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2000

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Mcode

Degree programme

Language

en

Pages

13588-13594

Series

Physical Review B, Volume 62, Issue 20

Abstract

We investigate carrier capture processes in strain-induced quantum dot structures. The quantum dots consist of a near-surface InGaAs/GaAs quantum well in which a lateral confining potential is generated by the strain from InP stressor islands grown on the sample surface. Using photoluminescence spectroscopy, we show that the rate of carrier capture into the quantum dots increases dramatically when the energetic depth of the confinement potential is reduced by enlarging the quantum well/surface separation D. While carriers in the quantum well region between the quantum dots are found to experience D-dependent nonradiative surface recombination, this process seems to be negligible for carriers in the quantum dots, presumably due to the protecting InP islands.

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Keywords

carrier capture processes, quantum dots, quantum wells, photoluminescence spectroscopy

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Citation

Lingk, C. & Helfer, W. & von Plessen, G. & Feldmann, J. & Stock, K. & Feise, M. W. & Citrin, D. S. & Lipsanen, Harri & Sopanen, M. & Virkkala, R. & Tulkki, J. & Ahopelto, J.. 2000. Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures. Physical Review B. Volume 62, Issue 20. P. 13588-13594. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.62.13588.