Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2018-09-01
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Language
en
Pages
1-7
Series
APL Materials, Volume 6, issue 9
Abstract
Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10-5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.Description
| openaire: EC/H2020/696656/EU//GrapheneCore1
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Citation
Liu , Y , Tan , Z , Kumar , M , Abhilash , T S , Liu , G J & Hakonen , P 2018 , ' Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials ' , APL Materials , vol. 6 , no. 9 , 0911021 , pp. 1-7 . https://doi.org/10.1063/1.5042327
