Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2008

Department

Department of Applied Physics

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Mcode

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Language

en

Pages

4

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Journal of Applied Physics, Volume 104, issue 3, pp. 1-4

Abstract

We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3×10−6e/Hz⎯⎯⎯⎯⎯√ over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7×1013 Hz(3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors.

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Keywords

carbon nanotube, single-electron transistor (SET)

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DOI

10.1063/1.2968123

Citation

Andresen, S E S, Wu, F, Danneau, R, Gunnarsson, D & Hakonen, P J 2008, 'Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor', Journal of Applied Physics, vol. 104, no. 3, 033715, pp. 1-4. https://doi.org/10.1063/1.2968123

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https://urn.fi/URN:NBN:fi:aalto-202510087796

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[article-cris] Perustieteiden korkeakoulu / SCI