In situ determination of InGaAs and GaAsN composition in multiquantum-well structures

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorReentilä, O.
dc.contributor.authorMattila, M.
dc.contributor.authorSopanen, Markku
dc.contributor.authorLipsanen, Harri
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-05-06T09:01:27Z
dc.date.available2015-05-06T09:01:27Z
dc.date.issued2007
dc.description.abstractMetal-organic vapor phase epitaxialgrowth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.en
dc.description.versionPeer revieweden
dc.format.extent033533/1-5
dc.format.mimetypeapplication/pdfen
dc.identifier.citationReentilä, O. & Mattila, M. & Sopanen, M. & Lipsanen, Harri. 2007. In situ determination of InGaAs and GaAsN composition in multiquantum-well structures. Journal of Applied Physics. Volume 101, Issue 3. P. 033533/1-5. ISSN 0021-8979 (printed). DOI: 10.1063/1.2435065.en
dc.identifier.doi10.1063/1.2435065
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15894
dc.identifier.urnURN:NBN:fi:aalto-201505062556
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 101, Issue 3
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordquantum wellsen
dc.subject.keywordrefractive indexen
dc.subject.keywordIII-V semiconductorsen
dc.subject.keywordindiumen
dc.subject.keywordmultiple quantum wellsen
dc.subject.otherPhysicsen
dc.titleIn situ determination of InGaAs and GaAsN composition in multiquantum-well structuresen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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