In situ determination of InGaAs and GaAsN composition in multiquantum-well structures

Loading...
Thumbnail Image

Access rights

© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap

URL

Journal Title

Journal ISSN

Volume Title

School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2007

Major/Subject

Mcode

Degree programme

Language

en

Pages

033533/1-5

Series

Journal of Applied Physics, Volume 101, Issue 3

Abstract

Metal-organic vapor phase epitaxialgrowth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.

Description

Keywords

quantum wells, refractive index, III-V semiconductors, indium, multiple quantum wells

Other note

Citation

Reentilä, O. & Mattila, M. & Sopanen, M. & Lipsanen, Harri. 2007. In situ determination of InGaAs and GaAsN composition in multiquantum-well structures. Journal of Applied Physics. Volume 101, Issue 3. P. 033533/1-5. ISSN 0021-8979 (printed). DOI: 10.1063/1.2435065.