In situ determination of InGaAs and GaAsN composition in multiquantum-well structures
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Journal ISSN
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2007
Major/Subject
Mcode
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Language
en
Pages
033533/1-5
Series
Journal of Applied Physics, Volume 101, Issue 3
Abstract
Metal-organic vapor phase epitaxialgrowth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.Description
Keywords
quantum wells, refractive index, III-V semiconductors, indium, multiple quantum wells
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Citation
Reentilä, O. & Mattila, M. & Sopanen, M. & Lipsanen, Harri. 2007. In situ determination of InGaAs and GaAsN composition in multiquantum-well structures. Journal of Applied Physics. Volume 101, Issue 3. P. 033533/1-5. ISSN 0021-8979 (printed). DOI: 10.1063/1.2435065.
