Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2017-11-09
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Language
en
Pages
1-5
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Physical Review Letters, Volume 119, issue 19
Abstract
We show that Be exhibits amphoteric behavior in GaN, involving switching between substitutional and interstitial positions in the lattice. This behavior is observed through the dominance of BeGa in the positron annihilation signals in Be-doped GaN, while the emergence of VGa at high temperatures is a consequence of the Be impurities being driven to interstitial positions. The similarity of this behavior to that found for Na and Li in ZnO suggests that this could be a universal property of light dopants substituting for heavy cations in compound semiconductors.
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Tuomisto, F, Prozheeva, V, Makkonen, I, Myers, T H, Bockowski, M & Teisseyre, H 2017, ' Amphoteric Be in GaN : Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites ', Physical Review Letters, vol. 119, no. 19, 196404, pp. 1-5 . https://doi.org/10.1103/PhysRevLett.119.196404