Shot noise of a multiwalled carbon nanotube field effect transistor

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2007

Department

Department of Applied Physics

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Language

en

Pages

5

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Physical Review B, Volume 75, issue 12, pp. 1-5

Abstract

We have investigated shot noise in a 6−nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2K over the frequency range of 600–950MHz. We find a transconductance of 3–3.5μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3μV/√Hz for V>0 and V<0, respectively. As effective charge noise, this corresponds to (2–3)×10−5e/√Hz.

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Keywords

carbon nanotube, shot noise, fiel effect transistor (FET), field effect transistor (FET), shot noise

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DOI

10.1103/PhysRevB.75.125419

Citation

Wu, F, Tsuneta, T, Tarkiainen, R, Gunnarsson, D, Wang, T-H & Hakonen, P J 2007, 'Shot noise of a multiwalled carbon nanotube field effect transistor', Physical Review B, vol. 75, no. 12, 125419, pp. 1-5. https://doi.org/10.1103/PhysRevB.75.125419

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https://urn.fi/URN:NBN:fi:aalto-202510087683

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[article-cris] Perustieteiden korkeakoulu / SCI