Origin of a Nanoindentation Pop-in Event in Silicon Crystal
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2017-03-03
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en
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Physical Review Letters, Volume 118, issue 9
Abstract
The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si-III/XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.Description
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Abram, R, Chrobak, D & Nowak, R 2017, ' Origin of a Nanoindentation Pop-in Event in Silicon Crystal ', Physical Review Letters, vol. 118, no. 9, 095502 . https://doi.org/10.1103/PhysRevLett.118.095502
