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Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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8
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Journal of Crystal Growth, Volume 499, pp. 47-54
Abstract
This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.
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Holmi, J, Bairamov, B H, Suihkonen, S & Lipsanen, H 2018, 'Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution', Journal of Crystal Growth, vol. 499, pp. 47-54. https://doi.org/10.1016/j.jcrysgro.2018.07.024