Compensating point defects in 4He+ -irradiated InN
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© 2007 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Pelli, A. & Yu, K. M. & Walukiewicz, W. & Schaff, W. J. 2007. Compensating point defects in 4He+ -irradiated InN. Physical Review B. Volume 75, Issue 19. 193201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.193201, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.75.193201.
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Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
193201/1-4
Series
Physical Review B, Volume 75, Issue 19
Abstract
We use positron annihilation spectroscopy to study 2 MeV 4He+ -irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm exp −1. The In vacancies are introduced at a significantly lower rate of 100cm−1, making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the other hand, negative non-open volume defects are introduced at a rate higher than 2000cm exp −1. These defects are tentatively attributed to interstitial nitrogen and may ultimately limit the free-electron concentration at high irradiation fluences.Description
Keywords
InN, positron annihilation, irradiation, vacancies
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Citation
Tuomisto, Filip & Pelli, A. & Yu, K. M. & Walukiewicz, W. & Schaff, W. J. 2007. Compensating point defects in 4He+ -irradiated InN. Physical Review B. Volume 75, Issue 19. 193201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.193201
