Point-defect complexes and broadband luminescence in GaN and AlN
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© 1997 American Physical Society (APS). This is the accepted version of the following article: Mattila, T. & Nieminen, Risto M. 1997. Point-defect complexes and broadband luminescence in GaN and AlN. Physical Review B. Volume 55, Issue 15. 9571-9576. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.9571, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.55.9571.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Author
Date
1997
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Mcode
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Language
en
Pages
9571-9576
Series
Physical Review B, Volume 55, Issue 15
Abstract
We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and AlN. The results reveal that defect complexes consisting of dominant donors bound to cation vacancies are likely to be formed in both materials. The position of the electronic levels in the band gap due to these defect complexes is shown to correlate well with the experimentally commonly observed broadband luminescence both in GaN and in AlN. The origin of the large bandwidth of the luminescence spectrum is discussed.Description
Keywords
GaN, AlN, point defect complexes
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Citation
Mattila, T. & Nieminen, Risto M. 1997. Point-defect complexes and broadband luminescence in GaN and AlN. Physical Review B. Volume 55, Issue 15. 9571-9576. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.9571.
