Light-induced degradation in copper-contaminated gallium-doped silicon
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© 2013 Wiley-Blackwell. This is the post print version of the following article: Lindroos, Jeanette & Yli-Koski, Marko & Haarahiltunen, Antti & Schubert, Martin C. & Savin, Hele. 2013. Light-induced degradation in copper-contaminated gallium-doped silicon. Physica Status Solidi RRL. Volume 7, Issue 4. 262-264. DOI: 10.1002/pssr.201307011, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssr.201307011/abstract.
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Mcode
Degree programme
Language
en
Pages
262-264
Series
Physica Status Solidi RRL, Volume 7, Issue 4
Abstract
To date, gallium-doped Czochralski (Cz) silicon has constituted a solar cell bulk material free of light-induced degradation. However, we measure light-induced degradation in gallium-doped Cz silicon in the presence of copper impurities. The measured degradation depends on the copper concentration and the material resistivity. Gallium-doped Cz silicon is found to be less sensitive to copper impurities than borondoped Cz silicon, emphasizing the role of boron in the formation of copper-related light-induced degradation.Description
Keywords
degradation, lifetime, silicon, gallium, copper
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Citation
Lindroos, Jeanette & Yli-Koski, Marko & Haarahiltunen, Antti & Schubert, Martin C. & Savin, Hele. 2013. Light-induced degradation in copper-contaminated gallium-doped silicon. Physica Status Solidi RRL. Volume 7, Issue 4. 262-264. Publisher: http://www.interscience.wiley.com/. DOI: 10.1002/pssr.201307011.
