Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorVahlman, H.
dc.contributor.authorHaarahiltunen, A.
dc.contributor.authorKwapil, W.
dc.contributor.authorSchön, J.
dc.contributor.authorInglese, A.
dc.contributor.authorSavin, H.
dc.contributor.departmentDepartment of Electronics and Nanoengineering
dc.contributor.departmentFraunhofer Institute for Solar Energy Systems
dc.date.accessioned2017-06-20T11:17:40Z
dc.date.available2017-06-20T11:17:40Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2018-05-15
dc.date.issued2017-05-21
dc.description.abstractThe presence of copper impurities is known to deteriorate the bulk minority carrier lifetime of silicon. In p-type silicon, the degradation occurs only under carrier injection (e.g., illumination), but the reason for this phenomenon called copper-related light-induced degradation (Cu-LID) has long remained uncertain. To clarify the physics of this problem, a mathematical model of Cu-LID was introduced in Paper I of this article. Within the model, kinetic precipitation simulations are interlinked with a Schottky junction model for electric behavior of metallic precipitates. As this approach enables simulating precipitation directly at the minority carrier lifetime level, the model is verified in this second part with a direct comparison to the corresponding degradation experiments and literature data. Convincing agreement is found with different doping and Cu concentrations as well as at increased temperature, and in the dark, both simulated degradation and measured degradation are very slow. In addition, modeled final lifetimes after illumination are very close to experimental final lifetimes, and a correlation with the final precipitate size is found. However, the model underestimates experimentally observed differences in the degradation rate at different illumination intensities. Nevertheless, the results of this work support the theory of Cu-LID as a precipitate formation process. Part of the results also imply that heterogeneous nucleation sites play a role during precipitate nucleation. The model reveals fundamental aspects of the physics of Cu-LID including how doping and heterogeneous nucleation site concentrations can considerably influence the final recombination activity.en
dc.description.versionPeer revieweden
dc.format.extent12
dc.format.mimetypeapplication/pdf
dc.identifier.citationVahlman , H , Haarahiltunen , A , Kwapil , W , Schön , J , Inglese , A & Savin , H 2017 , ' Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments ' , Journal of Applied Physics , vol. 121 , no. 19 , 195704 . https://doi.org/10.1063/1.4983455en
dc.identifier.doi10.1063/1.4983455
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: 5e110f6a-e146-459e-a41b-e5fdff15b285
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5e110f6a-e146-459e-a41b-e5fdff15b285
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dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/13444155/1_2E4983455.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/26961
dc.identifier.urnURN:NBN:fi:aalto-201706205685
dc.language.isoenen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 121, issue 19en
dc.rightsopenAccessen
dc.titleModeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experimentsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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