Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)
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© 1985 American Physical Society (APS). This is the accepted version of the following article: Vehanen, A. & Makinen, J. & Hautojarvi, P. & Huomo, H. & Lahtinen, J. & Nieminen, Risto M. & Valkealahti, S. 1985. Near-surface defect profiling with slow positrons: Argon-sputtered Al(110). Physical Review B. Volume 32, Issue 11. 7561-7563. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.32.7561, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.32.7561.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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7561-7563
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Physical Review B, Volume 32, Issue 11
Abstract
We report on slow-positron measurements of atomic defect distribution near a solid surface. Defects are produced by argon-ion bombardment of an Al(110) surface in ultrahigh vacuum. Defect profiles have a typical width of 15–25 Å and contain a broader tail extending to 50–100 Å. The defect density at the outermost atomic layers saturates at high argon fluences to a few atomic percent, depending on sputtering conditions. Defect production rate at >1 keV Ar+ energies is typically 1–5 vacancy-interstitial pairs per incident ion. Molecular-dynamics simulations of the collision cascade predict similar defect distributions.Description
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Vehanen, A. & Makinen, J. & Hautojarvi, P. & Huomo, H. & Lahtinen, J. & Nieminen, Risto M. & Valkealahti, S. 1985. Near-surface defect profiling with slow positrons: Argon-sputtered Al(110). Physical Review B. Volume 32, Issue 11. 7561-7563. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.32.7561.