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Light-induced degradation in multicrystalline silicon: the role of copper
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en
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7
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Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016), Volume 92, pp. 808-814, Energy Procedia
Abstract
In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.
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Inglese, A, Focareta, A, Schindler, F, Schön, J, Lindroos, J, Schubert, M C & Savin, H 2016, Light-induced degradation in multicrystalline silicon : the role of copper. in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016). vol. 92, Energy Procedia, Elsevier, pp. 808-814, International Conference on Crystalline Silicon Photovoltaics, Chambéry, France, 07/03/2016. https://doi.org/10.1016/j.egypro.2016.07.073