InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2022-01-25
Major/Subject
Mcode
Degree programme
Language
en
Pages
7
539-545
539-545
Series
ACS Applied Electronic Materials, Volume 4, issue 1
Abstract
We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.Description
Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlström Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlström Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Hällström for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society
Keywords
bendable, flexible, InSb nanowires, MOVPE/MOCVD, photoluminescence, photoresistor
Other note
Citation
Khayrudinov, V, Koskinen, T, Grodecki, K, Murawski, K, Kopytko, M, Yao, L, Jiang, H, Tittonen, I J, Lipsanen, H & Haggren, T 2022, ' InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication ', ACS Applied Electronic Materials, vol. 4, no. 1, pp. 539-545 . https://doi.org/10.1021/acsaelm.1c01175