Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packaging

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorEmadi, Fahimehen_US
dc.contributor.authorVuorinen, Vesaen_US
dc.contributor.authorPaulasto-Kröckel, Mervien_US
dc.contributor.departmentDepartment of Electrical Engineering and Automationen
dc.contributor.groupauthorElectronics Integration and Reliabilityen
dc.date.accessioned2023-02-28T15:35:35Z
dc.date.available2023-02-28T15:35:35Z
dc.date.issued2022en_US
dc.descriptionFunding Information: This work has been funded by iRel40. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, Austria, Belgium, Finland (Innovation Funding Agency, Business Finland), France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey Publisher Copyright: © 2022 IEEE. | openaire: EC/H2020/876659/EU//iRel40
dc.description.abstractMany MEMS and MOEMS devices require hermetic packaging with preferably no postprocessing after the MEMS device's releasing. Wafer-level Solid-Liquid Interdiffusion (SLID) bonding can provide simultaneous hermetic packaging and better electrical interconnects. Moreover, employing a physically deposited contact metallization on the device wafer instead of chemically deposited layers (such as electrochemical Cu) is of utmost importance as far as reducing the complexity of the MEMS/MOEMS packaging process integration is concerned. The current work studied the possibility of utilizing Co as a contact metallization layer for the low-temperature Cu-Sn-In-based SLID bonding. In order to guarantee the long-term reliability of the devices, a fundamental understanding of the formation and evolution of interconnection microstructures and mechanical characterization of the joint is of utmost importance. In this work, Cu-Sn-In electroplated Si chips were bonded to Co substrates at a temperature range 160-250°C. During the bonding process, a single intermetallic compound (IMC) (Cu,Co)6(Sn,In)5 formed at the bonding area, with no detectable Cu3Sn phase that causes voids formation. The Young's modulus and hardness of (Cu,Co)6(Sn,In)5 and Cu6Sn5, as a reference, were measured as 124.8±0.5 and 6.2±0.5, 114±1 and 6.7±0.5 MPa, respectively. Furthermore, the current study was able to produce a fully IMC joint of Cu-Sn-In/Co SLID system at 220°C for bonding time as short as 20 minutes.en
dc.description.versionPeer revieweden
dc.format.extent5
dc.format.extent359-363
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationEmadi, F, Vuorinen, V & Paulasto-Kröckel, M 2022, Utilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packaging . in 2022 IEEE 9th Electronics System-Integration Technology Conference, ESTC 2022 - Proceedings . 2022 IEEE 9th Electronics System-Integration Technology Conference, ESTC 2022 - Proceedings, IEEE, pp. 359-363, Electronics System-Integration Technology Conference, Sibiu, Romania, 13/09/2022 . https://doi.org/10.1109/ESTC55720.2022.9939539en
dc.identifier.doi10.1109/ESTC55720.2022.9939539en_US
dc.identifier.isbn9781665489478
dc.identifier.otherPURE UUID: 45f460af-8d61-4212-9fc8-e90961f17e4een_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/45f460af-8d61-4212-9fc8-e90961f17e4een_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85143138410&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/100807191/Full_paper.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/119874
dc.identifier.urnURN:NBN:fi:aalto-202302282212
dc.language.isoenen
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/876659/EU//iRel40en_US
dc.relation.ispartofElectronics System-Integration Technology Conferenceen
dc.relation.ispartofseries2022 IEEE 9th Electronics System-Integration Technology Conference, ESTC 2022 - Proceedingsen
dc.rightsopenAccessen
dc.subject.keywordCo contact metallizationen_US
dc.subject.keywordCu-Sn SLID bondingen_US
dc.subject.keywordCu-Sn-In SLID bondingen_US
dc.subject.keywordReliabilityen_US
dc.subject.keywordTLP bondingen_US
dc.titleUtilizing Co as a contact metallization for wafer-level Cu-Sn-In SLID bonding used in MEMS and MOEMS packagingen
dc.typeA4 Artikkeli konferenssijulkaisussafi
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