Noise performance of the radio-frequency single-electron transistor
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
13
Series
Journal of Applied Physics, Volume 95, issue 3, pp. 1274-1286
Abstract
We have analyzed a radio-frequency single-electron-transistor (RF-SET) circuit that includes a high-electron-mobility-transistor (HEMT) amplifier, coupled to the single-electron-transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise model and the experimental results. Our analysis shows, also, that the biggest improvement to the present RF-SETs will be achieved by increasing the charging energy and by lowering the HEMT amplifier noise contribution.Description
Other note
Citation
Roschier, L, Hakonen, P, Bladh, K, Delsing, P, Lehnert, K W, Spietz, L & Schoelkopf, R J 2004, 'Noise performance of the radio-frequency single-electron transistor', Journal of Applied Physics, vol. 95, no. 3, pp. 1274-1286. https://doi.org/10.1063/1.1635972